bpw41n www.vishay.com vishay semiconductors rev. 1.6, 23-aug-11 1 document number: 81522 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description bpw41n is a pin photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. filt er bandwidth is matched with 900 nm to 950 nm ir emitters. features ? package type: leaded ? package form: side view ? dimensions (in mm): 5 x 4 x 6.8 ? radiant sensitive area (in mm 2 ): 7.5 ? high radiant sensitivity ? daylight blocking filter matched with 940 nm emitters ? fast response times ? angle of half sensitivity: ? = 65 ? compliant to rohs directive to 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? high speed detector for infrared radiation ? infrared remote control and free air data transmission systems, e.g. in combination with tsalxxxx series ir emitters note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8480 product summary component i ra (a) ? (deg) 0.5 (nm) bpw41n 45 65 870 to 1050 ordering information ordering code packaging remarks package form bpw41n bulk moq: 4000 pcs, 4000 pcs/bulk side view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
bpw41n www.vishay.com vishay semiconductors rev. 1.6, 23-aug-11 2 document number: 81522 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - relative reverse ligh t current vs. ambient temperature fig. 2 - reverse light current vs. irradiance fig. 3 - reverse light current vs. reverse voltage fig. 4 - diode capacitance vs. reverse voltage basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 38 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 43 45 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 870 to 1050 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 0.6 0.8 1.0 1.2 1.4 94 8409 v r =5 v = 950 nm 100 80 60 40 20 0 i - re lati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel 0.01 0.1 1 0.1 1 10 100 1000 i - re v erse light c u rrent (a) ra e e - irradiance (m w /cm2) 10 94 8414 v r = 5 v = 950 nm v r - re v erse v oltage ( v ) 100 94 8415 i - re v erse light c u rrent (a) ra 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 = 950 nm 0 20 40 60 80 948407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 0.1 100 110
bpw41n www.vishay.com vishay semiconductors rev. 1.6, 23-aug-11 3 document number: 81522 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - relative spectral sensitivity vs. wavelength fi g. 6 - relative radiant sensitivity vs. angular displacement package dimensions in millimeters 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) rel - relati v e spectral sensiti v ity - w a v elength (nm) 1150 94 8408 1.0 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8406 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - ang u lar displacement sensiti v e area (2.8) (2.05) 0.4 0.45 6.8 8.9 4 - 0.05 + 0.1 - 0.05 + 0.01 0.3 0.3 5 0.2 0.2 2.3 0.2 - 0.8 iss u e:1; 01.07.96 dra w ing- n o.: 6.544-5108.01-4 specifications according to di n technical dra w ings area not plane c a chip position 19.8 < 0.5 2.5 nom. < 0.65 96 12195
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